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BTA16-600BW3G, BTA16-800BW3G Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
Features http://onsemi.com
* * * * * * * * *
Blocking Voltage to 800 V On-State Current Rating of 16 A RMS at 80C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt - 1500 V/ms minimum at 125C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating dI/dt - 4.0 A/ms minimum at 125C Internally Isolated (2500 VRMS) These are Pb-Free Devices
Rating Symbol VDRM, VRRM 600 800 IT(RMS) ITSM 16 170 A A Value Unit V 1
TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
MT2 G 4 MT1
MARKING DIAGRAM
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) BTA16-600BW3G BTA16-800BW3G On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25C) Circuit Fusing Consideration (t = 8.3 ms) Non-Repetitive Surge Peak Off-State Voltage (TJ = 25C, t = 10ms) Peak Gate Current (TJ = 125C, t = 20ms) Peak Gate Power (Pulse Width 1.0 ms, TC = 80C) Average Gate Power (TJ = 125C) Operating Junction Temperature Range Storage Temperature Range RMS Isolation Voltage (t = 300 ms, R.H. 30%, TA = 25C) BTA16-xBWG AYWW
2
3
TO-220AB CASE 221A STYLE 12
x A Y WW G
= 6 or 8 = Assembly Location = Year = Work Week = Pb-Free Package
I2t VDSM/ VRSM IGM PGM PG(AV) TJ Tstg Viso
120 VDSM/VRSM +100 4.0 20 1.0 -40 to +125 -40 to +150 2500
A2sec V A W W C C V 1 2 3 4
PIN ASSIGNMENT
Main Terminal 1 Main Terminal 2 Gate No Connection
ORDERING INFORMATION
Device BTA16-600BW3G BTA16-800BW3G Package TO-220AB (Pb-Free) TO-220AB (Pb-Free) Shipping 50 Units / Rail 50 Units / Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2008
December, 2008 - Rev. 1
1
Publication Order Number: BTA16-600BW3/D
BTA16-600BW3G, BTA16-800BW3G
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Case (AC) Junction-to-Ambient Symbol RqJC RqJA TL Value 2.13 60 260 Unit C/W C
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 seconds
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted; Electricals apply in both directions)
Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) ON CHARACTERISTICS Peak On-State Voltage (Note 2) (ITM = 22.5 A Peak) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Holding Current (VD = 12 V, Gate Open, Initiating Current = 150 mA) Latching Current (VD = 12 V, IG = 50 mA) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Gate Trigger Voltage (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Gate Non-Trigger Voltage (TJ = 125C) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (Gate Open, TJ = 125C, No Snubber) Critical Rate of Rise of On-State Current (TJ = 125C, f = 120 Hz, IG = 2 x IGT, tr 100 ns) Critical Rate of Rise of Off-State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125C) 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. (dI/dt)c dI/dt dV/dt 4.0 - 1500 - - - - 50 - A/ms A/ms V/ms VTM IGT - - 1.55 V mA 2.5 2.5 2.5 - - - - - 50 50 50 60 mA mA - - - 0.5 0.5 0.5 0.2 0.2 0.2 - - - - - - - - - 70 90 70 V 1.7 1.1 1.1 V - - - TJ = 25C TJ = 125C IDRM, IRRM mA - - - - 0.005 2.0 Symbol Min Typ Max Unit
IH IL
VGT
VGD
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2
BTA16-600BW3G, BTA16-800BW3G
Voltage Current Characteristic of Triacs (Bidirectional Device)
+ Current Quadrant 1 MainTerminal 2 +
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal 2 - IH VTM IRRM at VRRM on state IH
VTM
off state
+ Voltage IDRM at VDRM
Quadrant Definitions for a Triac
MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2
Quadrant II
(-) IGT GATE MT1 REF
(+) IGT GATE MT1 REF
Quadrant I
IGT - (-) MT2 (-) MT2
+ IGT
Quadrant III
(-) IGT GATE MT1 REF
(+) IGT GATE MT1 REF - MT2 NEGATIVE (Negative Half Cycle)
Quadrant IV
All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used.
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3
BTA16-600BW3G, BTA16-800BW3G
125 120 TC, CASE TEMPERATURE (C) 115 110 105 100 95 90 85 80 0 2 6 8 10 12 14 IT(RMS), RMS ON-STATE CURRENT (A) 4 16 = 180 = 30 and 60 = 90 = 120 20 PAV, AVERAGE POWER (WATTS) 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 IT(RMS), ON-STATE CURRENT (A) 14 16 = 30 DC 180 120 90 60
DC
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
1000
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1
Typical @ TJ = 25C Typical @ TJ = -40C
0.1
100 I T, INSTANTANEOUS ONSTATE CURRENT (AMP)
Typical @ TJ = 125C
0.01
0.1
1
10 100 t, TIME (ms)
1000
1 * 104
Figure 4. Thermal Response
10
55 IH, HOLD CURRENT (mA) Typical @ TJ = -40C 1 Typical @ TJ = 25C 50 45 40 35 30 25 20 15 10 0.1 0.5 1 1.5 2 2.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (V) 3 5 -40 -25 -10 5 20 35 50 65 80 95 110 125 MT2 Negative MT2 Positive
Typical @ TJ = 125C
Figure 3. On-State Characteristics http://onsemi.com
4
Figure @ T = -40C Typical 5. Hold Current Variation
J
TJ, JUNCTION TEMPERATURE (C)
BTA16-600BW3G, BTA16-800BW3G
100 IGT, GATE TRIGGER VOLTAGE (mA) VD = 12 V RL = 30 W Q3 1.8 1.6 1.4 1.2 10 Q1 Q2 1 0.8 0.6 1 -40 -25 -10 Q2 Q3 Q1 VD = 12 V RL = 30 W
5
20
35 50
65
80
95 110 125
0.4 -40 -25 -10
5
20
35 50
65
80
95 110 125
Figure 6. Gate Trigger Current Variation
dv/dt , CRITICAL RATE OF RISE OF OFFSTATE VOLTAGE (V/ s)
TJ, JUNCTION TEMPERATURE (C)
Figure 7. Gate Trigger Voltage Variation
TJ, JUNCTION TEMPERATURE (C)
5000 VD = 800 Vpk TJ = 125C
4K
3K
2K
1K
0
10
100 1000 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
10000
Figure 8. Critical Rate of Rise of Off-State Voltage (Exponential Waveform)
LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC TRIGGER CHARGE CONTROL TRIGGER CONTROL MEASURE I
1N4007
+ MT2 1N914 51 W G MT1
CHARGE
200 V
NONPOLAR CL
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
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BTA16-600BW3G, BTA16-800BW3G
PACKAGE DIMENSIONS
TO-220 CASE 221A-07 ISSUE O
-T- B F T C S
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04
Q H Z L V G
4
A U K
123
R J D N
STYLE 12: PIN 1. 2. 3. 4.
MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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BTA16-600BW3/D

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